Aberration Corrected FE-LEEM P90 now capable of 2.0nm Resolution
As a result of a collaboration with Dr. Rudolf Tromp at the IBM Watson Research Center in Yorktown Heights, USA, an ultimate resolution of 2.0nm has been achieved. Test measurements have been performed on thin graphene layers on SiC(111). Areas with different numbers of carbon layers show different gray levels. The data below shows a LEEM image where step contrast is seen in areas with the same layer number. The profile has been averaged over strips 10 pixels wide, as indicated in the image by the yellow boxes. Based on a 20% - 80% criterion the step width is determined to be 1.96nm.
Details provided here (PDF download).
Ultimate resolution of 4.1nm achieved with the FE-LEEM P90
New data of the second FE-LEEM P90 delivered and assembled by SPECS shows an ultimate resolution below 5nm, down to 4.1nm.
The data shown has been integrated within the rectangles to generate the profiles.
Si(100)-2x1: Dark field image taken at 3.5eV kinetic energy. Field of view is 1260nm:
Si(100)-2x1: Dark field image taken at 3.5eV kinetic energy. Field of view is 840nm: