Following a paper from Prof. Neddermeyer, University of Halle-Wittenberg, extreme tunneling conditions were chosen at temperatures exceeding 600°C to create Silicon islands. Several layers of grown Silicon could be recorded. Diffusion driven decay of the islands was observed within seconds except of the last layer.
A. Kraus et al., Appl. Phys. A 66, S953-S957 (1998)