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- Argon
Ion Beam Deposition
Ion Beam Assisted Deposition (IBAD) - Oxygen
Oxide growth: HTc superconductors, optical coatings, dielectrics
Reactive sputtering, laser ablation
Ceramic growth, Al2O3
Oxygen cleaning
Oxidation kinetics
Post growth oxidation/low temperature: SiO2 - Nitrogen Nitriding: GaN, AlN, InN, SiN
Doping: ZnSe
Alloying: GaAlAsN - Hydrogen
Cleaning
Growth enhancement / surfactant - Chlorine
In-situ etching - Methane (carbon)
SiC - Can be used as plasma source, atom source or ion source
Product Description:
The SPECS Mini ECR plasma source is a truly UHV compatible source. Fully bakeable, with an all-welded stainless steel vacuum envelope, and outstanding cooling from a full length water-jacket, it is suitable for use in vacuum levels ranging from HV to those found in the most demanding MBE applications. Through the action of the well-known electron cyclotron resonance (ECR) phenomenon, a high density plasma is created by coupling a radially symmetric 2.45 GHz microwave field to ions on the 86 mT surface of a multi-polar magnetic array. A unique combination of features and options make this an extraordinarily versatile plasma source.




